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PE3117C - P-Channel Enhancement Mode Power MOSFET

Download the PE3117C datasheet PDF. This datasheet also covers the PE3117C-ChipSourceTek variant, as both devices belong to the same p-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The PE3117C uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

It is ESD protected.

Key Features

  • VDS = -30V, ID = -7A RDS(ON) < 22mΩ @ VGS=-10V RDS(ON) < 32mΩ @ VGS=-4.5V ESD Rating: ≥4000V HBM Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PE3117C-ChipSourceTek_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PE3117C
Manufacturer ChipSourceTek
File Size 0.99 MB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE3117C Datasheet

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Other Datasheets by ChipSourceTek

Part Number Description
PE3117 P-Channel Enhancement Mode Power MOSFET
PE3117F P-Channel Enhancement Mode Power MOSFET
PE3010 N-Channel Enhancement Mode Power MOSFET
PE30100K N-Channel Power MOSFET
PE3024KC N and P Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PE3117C P-Channel Enhancement Mode Power MOSFET Description The PE3117C uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected. General Features ● VDS = -30V, ID = -7A RDS(ON) < 22mΩ @ VGS=-10V RDS(ON) < 32mΩ @ VGS=-4.