logo
Datasheet4U.com - PE3117C
logo

PE3117C Datasheet, MOSFET, ChipSourceTek

PE3117C Datasheet, MOSFET, ChipSourceTek

PE3117C

datasheet Download (Size : 0.99MB)

PE3117C Datasheet
PE3117C

datasheet Download (Size : 0.99MB)

PE3117C Datasheet

PE3117C Features and benefits

PE3117C Features and benefits


* VDS = -30V, ID = -7A RDS(ON) < 22mΩ @ VGS=-10V RDS(ON) < 32mΩ @ VGS=-4.5V ESD Rating: ≥4000V HBM Schematic diagram
* High Power and current handing capability.

PE3117C Application

PE3117C Application

It is ESD protected. General Features
* VDS = -30V, ID = -7A RDS(ON) < 22mΩ @ VGS=-10V RDS(ON) < 32mΩ @ VGS=-4.5V .

PE3117C Description

PE3117C Description

The PE3117C uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. It is ESD protected. General Features
* VDS = -30V, ID = -7A RDS(ON) < 22mΩ @ VGS=-10V RDS(ON) < 32mΩ.

Image gallery

PE3117C Page 1 PE3117C Page 2 PE3117C Page 3

<?=PE3117C?> Page 2 <?=?> Page 3

TAGS

PE3117C
P-Channel
Enhancement
Mode
Power
MOSFET
ChipSourceTek

Manufacturer


ChipSourceTek

Related datasheet

PE3117

PE3117F

PE3

PE300B-10UV

PE300BF

PE300BUV

PE300C-10F

PE3010

PE30100K

PE3018U

PE3024KC

PE3050K

PE3080K

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts