Datasheet4U Logo Datasheet4U.com

PE3401A - P-Channel Enhancement Mode Power MOSFET

Description

The PE3401A uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS = -30V, ID = -4.2A RDS(ON) < 50mΩ @ VGS=-10V RDS(ON) < 65mΩ @ VGS=-4.5V RDS(ON) < 100mΩ @ VGS=-2.5V Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

📥 Download Datasheet

Datasheet Details

Part number PE3401A
Manufacturer ChipSourceTek
File Size 0.96 MB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE3401A Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
PE3401A P-Channel Enhancement Mode Power MOSFET semi one
PE3401 P-Channel Enhancement Mode Power MOSFET semi one
PE3401F P-Channel Enhancement Mode Power MOSFET semi one
PE3400 N-Channel Enhancement Mode Power MOSFET semi one
PE3400A N-Channel Enhancement Mode Power MOSFET semi one

Other Datasheets by ChipSourceTek

Part Number Description
PE3401 P-Channel Power MOSFET
PE3407A P-Channel Enhancement Mode Power MOSFET
PE3010 N-Channel Enhancement Mode Power MOSFET
PE30100K N-Channel Power MOSFET
PE3024KC N and P Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PE3401A P-Channel Enhancement Mode Power MOSFET Description The PE3401A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features ● VDS = -30V, ID = -4.2A RDS(ON) < 50mΩ @ VGS=-10V RDS(ON) < 65mΩ @ VGS=-4.5V RDS(ON) < 100mΩ @ VGS=-2.
Published: |