PE58200P Datasheet, MOSFET, ChipSourceTek

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PE58200P Features and benefits

* VDS = 85V, ID = 200A RDS(ON) < 3.2mΩ @ VGS=10V Schematic diagram
* High Power and current handing capability
* Lead free product is acquired
* Surface.

PE58200P Application

General Features
* VDS = 85V, ID = 200A RDS(ON) < 3.2mΩ @ VGS=10V Schematic diagram
* High Power and current.

PE58200P Description

The PE58200P uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features
* VDS = 85V, ID = 200A RDS(ON) < 3.2mΩ @ VGS=10V Schematic diagram
* High Power a.

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