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PE58200PA Datasheet, MOSFET, ChipSourceTek

PE58200PA Datasheet, MOSFET, ChipSourceTek

PE58200PA

datasheet Download (Size : 1.72MB)

PE58200PA Datasheet
PE58200PA

datasheet Download (Size : 1.72MB)

PE58200PA Datasheet

PE58200PA Features and benefits

PE58200PA Features and benefits


* VDS = 85V, ID = 200A RDS(ON) < 3.2mΩ @ VGS=10V Schematic diagram
* High Power and current handing capability
* Lead free product is acquired
* Surface.

PE58200PA Application

PE58200PA Application

General Features
* VDS = 85V, ID = 200A RDS(ON) < 3.2mΩ @ VGS=10V Schematic diagram
* High Power and current.

PE58200PA Description

PE58200PA Description

The PE58200PA uses deep trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features
* VDS = 85V, ID = 200A RDS(ON) < 3.2mΩ @ VGS=10V Schematic diagram
* High Power .

Image gallery

PE58200PA Page 1 PE58200PA Page 2 PE58200PA Page 3

TAGS

PE58200PA
N-Channel
Enhancement
Mode
Power
MOSFET
ChipSourceTek

Manufacturer


ChipSourceTek

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