PE58120G N-Channel Enhancement Mode Power MOSFET
● VDS = 85V, ID = 90A
RDS(ON) < 6mΩ @ VGS=10V RDS(ON) < 6.5mΩ @ VGS=8V
Schematic diagram
● High Power and current handing capability
● Lead free product is.
General Features
● VDS = 85V, ID = 90A
RDS(ON) < 6mΩ @ VGS=10V RDS(ON) < 6.5mΩ @ VGS=8V
Schematic diagram
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