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PE60D58S - N-Channel Enhancement Mode Power MOSFET

Download the PE60D58S datasheet PDF. This datasheet also covers the PE60D58S-ChipSourceTek variant, as both devices belong to the same n-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The PE60D58S uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS = 60V, ID = 8A RDS(ON) < 18mΩ @ VGS=10V RDS(ON) < 22mΩ @ VGS=4.5V Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PE60D58S-ChipSourceTek_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PE60D58S
Manufacturer ChipSourceTek
File Size 1.15 MB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE60D58S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PE60D58S N-Channel Enhancement Mode Power MOSFET Description The PE60D58S uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 60V, ID = 8A RDS(ON) < 18mΩ @ VGS=10V RDS(ON) < 22mΩ @ VGS=4.