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PE7309DS - P-Channel Enhancement Mode Power MOSFET

Download the PE7309DS datasheet PDF. This datasheet also covers the PE7309DS-ChipSourceTek variant, as both devices belong to the same p-channel enhancement mode power mosfet family and are provided as variant models within a single manufacturer datasheet.

Description

The PE7309DS uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS = -30V, ID = -9A RDS(ON) < 21mΩ @ VGS=-10V RDS(ON) < 32mΩ @ VGS=-4.5V Schematic diagram.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (PE7309DS-ChipSourceTek_removed.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number PE7309DS
Manufacturer ChipSourceTek
File Size 0.96 MB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet PE7309DS Datasheet

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Other Datasheets by ChipSourceTek

Part Number Description
PE7150M P-Channel Enhancement Mode Power MOSFET
PE7165G P-Channel Enhancement Mode Power MOSFET
PE7170G P-Channel Enhancement Mode Power MOSFET
PE7204A P-Channel Enhancement Mode Power MOSFET
PE7208F P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
PE7309DS P-Channel Enhancement Mode Power MOSFET Description The PE7309DS uses advanced trench technology to provide excellent RDS(ON) and low gate charge. It can be used in a wide variety of applications. General Features ● VDS = -30V, ID = -9A RDS(ON) < 21mΩ @ VGS=-10V RDS(ON) < 32mΩ @ VGS=-4.
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