CY7C1041BV33 ram equivalent, 256k x 16 static ram.
* High speed — tAA = 12 ns
* Low active power — 612 mW (max.)
* Low CMOS standby power (Commercial L version) — 1.8 mW (max.)
* 2.0V Data Retention (600 µ.
of read and write modes. The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when the device is deselected (CE HIGH), the outputs are disabled (OE HIGH), the BHE and BLE are disabled (BHE, BLE HIGH), or during a write oper.
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