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CY7C1420KV18 Datasheet

Manufacturer: Cypress (now Infineon)

This datasheet includes multiple variants, all published together in a single manufacturer document.

CY7C1420KV18 datasheet preview

Datasheet Details

Part number CY7C1420KV18
Datasheet CY7C1420KV18 CY7C1418KV18 Datasheet (PDF)
File Size 777.80 KB
Manufacturer Cypress (now Infineon)
Description 36-Mbit DDR II SRAM Two-Word Burst Architecture
CY7C1420KV18 page 2 CY7C1420KV18 page 3

CY7C1420KV18 Overview

The CY7C1418KV18, and CY7C1420KV18 are 1.8 V synchronous pipelined SRAM equipped with DDR II architecture. The DDR II consists of an SRAM core with advanced synchronous peripheral circuitry and a 1-bit burst counter. Addresses for read and write are latched on alternate rising edges of the input (K) clock.

CY7C1420KV18 Key Features

  • 36-Mbit density (2M × 18, 1M × 36)
  • 333 MHz clock for high bandwidth
  • Two-word burst for reducing address bus frequency
  • Double data rate (DDR) interfaces (data transferred at
  • Two input clocks (K and K) for precise DDR timing
  • SRAM uses rising edges only
  • Two input clocks for output data (C and C) to minimize clock
  • Echo clocks (CQ and CQ) simplify data capture in high speed
  • Synchronous internally self-timed writes
  • DDR II operates with 1.5 cycle read latency when DOFF is
Cypress (now Infineon) logo - Manufacturer

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