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MTB11N03Q8 Datasheet Preview

MTB11N03Q8 Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C711Q8
Issued Date : 2009.05.07
Revised Date :2012.03.26
Page No. : 1/9
N-Channel Logic Level Enhancement Mode Power MOSFET
MTB11N03Q8
BVDSS
ID
RDSON(max)
30V
16A
8.5mΩ
Description
The MTB11N03Q8 is a N-channel enhancement-mode MOSFET, providing the designer with the best
combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness.
The SOP-8 package is universally preferred for all commercial-industrial surface mount applications
and suited for low voltage applications such as DC/DC converters.
Features
Single Drive Requirement
Low On-resistance
Fast Switching Characteristic
Dynamic dv/dt rating
Repetitive Avalanche Rated
Pb-free and Halogen-free package
Symbol
MTB11N03Q8
Outline
Pin 1
SOP-8
GGate
DDrain
SSource
MTB11N03Q8
CYStek Product Specification




Cystech Electonics

MTB11N03Q8 Datasheet Preview

MTB11N03Q8 Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Spec. No. : C711Q8
Issued Date : 2009.05.07
Revised Date :2012.03.26
Page No. : 2/9
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=100°C, VGS=10V
Pulsed Drain Current
Avalanche Current
Avalanche Energy @ L=0.1mH, ID=11A, RG=25Ω
Repetitive Avalanche Energy @ L=0.05mH
Total Power Dissipation
TA=25
TA=100
Operating Junction and Storage Temperature Range
Symbol
VDS
VGS
ID
IDM
IAS
EAS
EAR
PD
Tj, Tstg
Limits
30
±20
16 *3
10 *3
50 *1
16
9.8
4.9 *2
3.1 *3
1.2 *3
-55~+150
Unit
V
A
mJ
W
°C
Thermal Data
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction-to-case, max
Rth,j-c
25 °C/W
Thermal Resistance, Junction-to-ambient, max
Rth,j-a
40 *3
°C/W
Note : 1. Pulse width limited by maximum junction temperature.
2. Duty cycle1%.
3. Surface mounted on 1 in² copper pad of FR-4 board, t10s; 125°C/W when mounted on minimum copper pad.
Characteristics (TC=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit Test Conditions
Static
BVDSS
VGS(th)
GFS *1
IGSS
IDSS
RDS(ON) *1
Dynamic
Ciss
Coss
Crss
30
1.0
-
-
-
-
-
-
-
-
-
-
1.5
20
-
-
-
6.7
10
1638
176
141
-
3.0
-
±100
1
25
8.5
13.5
-
-
-
V VGS=0, ID=250μA
V VDS = VGS, ID=250μA
S VDS =5V, ID=11A
nA VGS=±20
μA
VDS =24V, VGS =0
VDS =20V, VGS =0, Tj=125°C
mΩ VGS =10V, ID=16A
mΩ VGS =4.5V, ID=12A
pF VGS=0V, VDS=15V, f=1MHz
MTB11N03Q8
CYStek Product Specification


Part Number MTB11N03Q8
Description N-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
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