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MTE05N10FP - N-Channel Enhancement Mode Power MOSFET

Key Features

  • Low On Resistance.
  • Simple Drive Requirement.
  • Low Gate Charge.
  • Fast Switching Characteristic.
  • Insulating package, front/back side insulating voltage=2500V(AC).
  • RoHS compliant package Symbol MTE05N10FP Outline TO-220FP G：Gate D：Drain S：Source GDS Ordering Information Device MTE05N10FP-0-UB-S Package TO-220FP (RoHS compliant package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant.

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Datasheet Details

Part number MTE05N10FP
Manufacturer Cystech Electonics
File Size 324.05 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTE05N10FP Datasheet

Full PDF Text Transcription for MTE05N10FP (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MTE05N10FP. For precise diagrams, and layout, please refer to the original PDF.

CYStech Electronics Corp. Spec. No. : C928FP Issued Date : 2015.03.16 Revised Date : 2015.05.04 Page No. : 1/ 8 N-Channel Enhancement Mode Power MOSFET MTE05N10FP BVDSS I...

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No. : 1/ 8 N-Channel Enhancement Mode Power MOSFET MTE05N10FP BVDSS ID @ VGS=10V, TC=25°C RDSON(TYP) @ VGS=10V, ID=20A RDSON(TYP) @ VGS=7V, ID=20A 100V 109A 5.9mΩ 6.

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