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Cystech Electonics

MTE05N10FP Datasheet Preview

MTE05N10FP Datasheet

N-Channel Enhancement Mode Power MOSFET

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CYStech Electronics Corp.
Spec. No. : C928FP
Issued Date : 2015.03.16
Revised Date : 2015.05.04
Page No. : 1/ 8
N-Channel Enhancement Mode Power MOSFET
MTE05N10FP BVDSS
ID @ VGS=10V, TC=25°C
RDSON(TYP) @ VGS=10V, ID=20A
RDSON(TYP) @ VGS=7V, ID=20A
100V
109A
5.9mΩ
6.2mΩ
Features
Low On Resistance
Simple Drive Requirement
Low Gate Charge
Fast Switching Characteristic
Insulating package, front/back side insulating voltage=2500V(AC)
RoHS compliant package
Symbol
MTE05N10FP
Outline
TO-220FP
GGate DDrain SSource
GDS
Ordering Information
Device
MTE05N10FP-0-UB-S
Package
TO-220FP
(RoHS compliant package)
Shipping
50 pcs/tube, 20 tubes/box, 4 boxes / carton
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, UB : 50 pcs / tube, 20 tubes/box
Product rank, zero for no rank products
Product name
MTE05N10FP
CYStek Product Specification




Cystech Electonics

MTE05N10FP Datasheet Preview

MTE05N10FP Datasheet

N-Channel Enhancement Mode Power MOSFET

No Preview Available !

CYStech Electronics Corp.
Absolute Maximum Ratings (TC=25°C, unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @ TC=25°C, VGS=10V(silicon limit)
Continuous Drain Current @ TC=100°C, VGS=10V(silicon limit)
Continuous Drain Current @ TC=25°C, VGS=10V(package limit) (Note 1)
Pulsed Drain Current
(Note 3)
Continuous Drain Current @ TA=25°C, VGS=10V
Continuous Drain Current @ TA=70°C, VGS=10V
Avalanche Current
Avalanche Energy @ L=1mH, ID=25A, RG=25Ω
(Note 2)
(Note 2)
(Note 3)
(Note 2)
Repetitive Avalanche Energy@ L=0.1mH
Power Dissipation
TC=25°C
TC=100°C
Power Dissipation
TA=25°C
TA=70°C
(Note 3)
(Note 1)
(Note 1)
(Note 2)
(Note 2)
Operating Junction and Storage Temperature
Symbol
VDS
VGS
ID
IDM
IDSM
IAS
EAS
EAR
PD
PDSM
Tj, Tstg
Spec. No. : C928FP
Issued Date : 2015.03.16
Revised Date : 2015.05.04
Page No. : 2/ 8
Limits
100
±30
109
77
60
300
11
8.8
25
323
20
200
100
2
1.3
-55~+175
Unit
V
A
mJ
W
W
°C
Thermal Data
Parameter
Thermal Resistance, Junction-to-case, max
Thermal Resistance, Junction-to-ambient, max, t10s (Note 2)
Thermal Resistance, Junction-to-ambient, max
(Note 2)
Symbol
Rth,j-c
Rth,j-a
Value
0.75
15
62.5
Unit
°C/W
°C/W
°C/W
Note : 1.The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful
in setting the upper dissipation limit for cases where additional heatsinking is used.
2. The value of RθJA is measured with the device mounted on 1 in²FR-4 board with 2 oz. copper, in a still air
environment with TA=25°C. The power dissipation PDSM is based on RθJA and the maximum allowed junction
temperature of 150°C. The value in any given application depends on the user’s specific board design, and the
maximum temperature of 175°C may be used if the PCB allows it.
3. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency
and low duty cycles to keep initial TJ=25°C.
MTE05N10FP
CYStek Product Specification


Part Number MTE05N10FP
Description N-Channel Enhancement Mode Power MOSFET
Maker Cystech Electonics
Total Page 8 Pages
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