MTE05N10FP Key Features
- Low On Resistance
- Simple Drive Requirement
- Low Gate Charge
- Fast Switching Characteristic
- Insulating package, front/back side insulating voltage=2500V(AC)
- RoHS pliant package
- Part: MTE05N10FP
- Manufacturer: Cystech Electonics
- Size: 324.05 KB
Related Cystech Electonics Datasheets
| Part Number | Description |
|---|---|
| MTE05N10E3 | N-Channel Enhancement Mode Power MOSFET |
| MTE05N08E3 | N-Channel Enhancement Mode Power MOSFET |
| MTE05N08F7T | N-Channel Enhancement Mode Power MOSFET |
| MTE050N10KRJ3 | N -Channel Enhancement Mode Power MOSFET |
| MTE050P10E3 | P-Channel Enhancement Mode Power MOSFET |
MTE05N10FP Description
CYStech Electronics Corp. 2015.03.16 Revised Date.