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MTEA6C15J4 - N & P-Channel Enhancement Mode Power MOSFET

Key Features

  • Low gate charge.
  • Simple drive requirement.
  • ESD protected.
  • Pb-free lead plating and halogen-free package RDSON(TYP)@VGS=10V(-10V) RDSON(TYP)@VGS=6V(-6V) N-CH 150V 9.3A 163mΩ 177mΩ P-CH -150V -7.1A 283mΩ 308Ω Equivalent Circuit MTEA6C15J4 Outline TO-252-4L G：Gate D：Drain S：Source Absolute Maximum Ratings (TA=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V(-10V) Continuous Drain.

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Datasheet Details

Part number MTEA6C15J4
Manufacturer Cystech Electonics
File Size 290.50 KB
Description N & P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet MTEA6C15J4 Datasheet

Full PDF Text Transcription for MTEA6C15J4 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for MTEA6C15J4. For precise diagrams, and layout, please refer to the original PDF.

CYStech Electronics Corp. Spec. No. : C938J4 Issued Date : 2013.12.04 Revised Date : 2013.12.30 Page No. : 1/13 N & P-Channel Enhancement Mode Power MOSFET MTEA6C15J4 BVD...

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No. : 1/13 N & P-Channel Enhancement Mode Power MOSFET MTEA6C15J4 BVDSS ID @VGS=10V(-10V) Features • Low gate charge • Simple drive requirement • ESD protected • Pb-free lead plating and halogen-free package RDSON(TYP)@VGS=10V(-10V) RDSON(TYP)@VGS=6V(-6V) N-CH 150V 9.3A 163mΩ 177mΩ P-CH -150V -7.

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