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DC COMPONENTS CO., LTD.
R
2SB772D
DISCRETE SEMICONDUCTORS
TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR
Description
Designed for use in output stage of 1W audio amplifier, voltage regulator, DC-DC converter and relay driver.
Pinning
1 = Emitter 2 = Collector 3 = Base
.163(4.12) .153(3.87) .044(1.12) .034(0.87) .060(1.52) .050(1.27)
TO-126ML
.146(3.70) .136(3.44)
Absolute Maximum Ratings(TA=25oC)
Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current(DC) Total Power Dissipation(TC=25 C) Total Power Dissipation(TA=25 C) Junction Temperature Storage Temperature
o o
.148(3.75) .138(3.50)
Symbol VCBO VCEO VEBO IC IC IB PD PD TJ TSTG
Rating -40 -30 -5 -3 -7 -0.