Datasheet Details
| Part number | 2SB772D |
|---|---|
| Manufacturer | Dc Components |
| File Size | 242.72 KB |
| Description | PNP Transistor |
| Download | 2SB772D Download (PDF) |
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| Part number | 2SB772D |
|---|---|
| Manufacturer | Dc Components |
| File Size | 242.72 KB |
| Description | PNP Transistor |
| Download | 2SB772D Download (PDF) |
|
|
|
Designed for use in output stage of 1W audio amplifier, voltage regulator, DC-DC converter and relay driver.
Pinning 1 = Emitter 2 = Collector 3 = Base .163(4.12) .153(3.87) .044(1.12) .034(0.87) .060(1.52) .050(1.27) TO-126ML .146(3.70) .136(3.44) Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulse) Base Current(DC) Total Power Dissipation(TC=25 C) Total Power Dissipation(TA=25 C) Junction Temperature Storage Temperature o o .148(3.75) .138(3.50) Symbol VCBO VCEO VEBO IC IC IB PD PD TJ TSTG Rating -40 -30 -5 -3 -7 -0.6 10 1 +150 -55 to +150 Unit V V V A A A W W o o .180 Typ (4.56) .090 Typ (2.28) Dimensions in inches and (millimeters) .591(15.0) .551(14.0) .056(1.42) .046(1.17) .033(0.84) .027(0.68) .300(7.62) .290(7.37) 1 2 3 .084(2.12) .074(1.87) .123(3.12) .113(2.87) .084(2.14) .074(1.88) .027(0.69) .017(0.43) C C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) VBE(sat) hFE1 hFE2 fT Cob 380µs, Duty Cycle 2% Min -40 -30 -5 30 100 - Typ -0.3 -1 200 80 55 Max -1 -1 -0.5 -2 400 - Unit V V V µA µA V V MHz pF Test Conditions IC=-100µA IC=-1mA IE=-10µA VCB=-30V VEB=-3V IC=-2A, IB=-0.2A IC=-2A, IB=-0.2A IC=-20mA, VCE=-2V IC=-1A, VCE=-2V IC=-0.1A, VCE=-5V IE=0, VCB=-10V, f=1MHz Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage(1) Base-Emitter Saturation Voltage(1) DC Current Gain (1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width Classification of hFE2 Rank Range Q 100~200 P 160~320 E 200~400
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R 2SB772D DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SB772 | MEDIUM POWER LOW-VOLTAGE TRANSISTOR | Unisonic Technologies |
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2SB772 | PNP SILICON POWER TRANSISTOR | NEC |
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2SB772 | PNP MEDIUM POWER TRANSISTOR | ST Microelectronics |
 |
2SB772 | Plastic Encapsulate Transistors | SeCoS |
 |
2SB772 | Silicon PNP Power Transistors | Inchange Semiconductor |
| Part Number | Description |
|---|---|
| 2SB772S | PNP EPITAXIAL PLANAR TRANSISTOR |
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