DMS3014SSS

DMS3014SSS Key Features

• DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver
• Low RDS(ON)
• minimizes conduction losses
• Low VSD
• reducing the losses due to body diode conduction
• Low Qrr
• lower Qrr of the integrated Schottky reduces body diode switching losses
• Low gate capacitance (Qg/Qgs) ratio
• reduces risk of shootthrough or cross conduction currents at high frequencies
• Avalanche rugged