DMS3014SSS Datasheet | Diodes Incorporated

Features - DIOFET utilizes a unique patented process to monolithically integrate a MOSFET and a Schottky in a single die to deliver: - Low RDS(ON) - minimizes conduction losses - Low VSD - reducing the losses due to body diode conduction - Low Qrr - lower Qrr of the integrated Schottky reduces body diode switching losses - Low gate capacitance (Qg/Qgs) ratio - reduces risk of shootthrough or cross conduction currents at high frequencies - Avalanche rugged - IAR and EAR rated Lead Free, Ro HS pliant (Note 1) "Green" Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data - - - - - - - Case: SO-8 Case Material: Molded Plastic, “Green” Molding pound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Marking Information: See Page 5 Ordering Information: See Page 5 Weight: 0.072 grams (approximate) NEW PRODUCT - - - S S S G Top View Top View Internal Schematic Maximum Ratings @TA = 25°C unless otherwise specified Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 3) VGS = 4.5V Steady State TA = 25°C TA = 85°C Symbol VDSS VGSS ID IDM Value 30 ±12 10.4 6.6 63 30 45 Unit V V A A A m J Pulsed Drain Current (Note 4) Avalanche Current (Notes 4 & 5) Repetitive Avalanche Energy (Notes 4 & 5) L = 0.1m H Thermal Characteristics Characteristic Power Dissipation (Note 3) Thermal Resistance, Junction to Ambient @TA = 25°C (Note 3) Operating and Storage Temperature Range Notes: Symbol PD RθJA TJ, TSTG Value 1.55 81.3 -55 to +150 Unit W °C/W °C 1. No purposefully added lead. 2. Diodes Inc.'s "Green" policy can be found on our website at http://.diodes./products/lead_free/index.php. 3. Device mounted on 1in - 1in FR-4 PCB with 2oz. Copper. The value in any given application depends on the user’s specific board design. 4. Repetitive rating, pulse width limited by junction temperature. 5. IAR and EAR rating are based on...