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XTR2N0400 - 40V N-Channel Power MOSFET

Description

XTR2N0400 is a family of N-channel power MOSFETs designed to reliably operate over a wide range of temperatures.

Full functionality is guaranteed from -60°C to +230°C, though operation well below and above this temperature range is achieved.

Features

  • Minimum BVDSS = 55V.
  • Allowed VGS range.
  • 5.5V to +5.5V.
  • Operational beyond the -60°C to +230°C temperature range.
  • Low RDS(on) o XTR2N0425: 560 mΩ @ 230°C o XTR2N0450: 255 mΩ @ 230°C.
  • Maximum ID: o XTR2N0425: 4.7A @ 230°C o XTR2N0450: 10.3A @ 230°C.
  • On-time (td(on)+tr): o XTR2N0425: 25nsec @ 230°C o XTR2N0450: 30nsec @ 230°C.
  • Off-time (td(off)+tf): o XTR2N0425: 56nsec @ 230°C o XTR2N0450: 68nsec @ 230°C.
  • Ruggedized.

📥 Download Datasheet

Datasheet Details

Part number XTR2N0400
Manufacturer EASii
File Size 684.77 KB
Description 40V N-Channel Power MOSFET
Datasheet download datasheet XTR2N0400 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
XTR2N0400 High Temperature, 40V N-Channel Power MOSFET Data Sheet Rev 3 – August 2021 (DS-00101-11) PRODUCTION XTRPPPPP YYWWANN CDIP8 XTR2N0425 XTRPPPPP YYWWANN TO257-3 XTR2N0425 FEATURES • Minimum BVDSS = 55V. • Allowed VGS range –5.5V to +5.5V. • Operational beyond the -60°C to +230°C temperature range. • Low RDS(on) o XTR2N0425: 560 mΩ @ 230°C o XTR2N0450: 255 mΩ @ 230°C • Maximum ID: o XTR2N0425: 4.7A @ 230°C o XTR2N0450: 10.3A @ 230°C • On-time (td(on)+tr): o XTR2N0425: 25nsec @ 230°C o XTR2N0450: 30nsec @ 230°C • Off-time (td(off)+tf): o XTR2N0425: 56nsec @ 230°C o XTR2N0450: 68nsec @ 230°C • Ruggedized 3-lead TO257, 8-lead side brazed DIP and 8-lead SOIC with ePAD. • Also available as bare die. APPLICATIONS • Reliability-critical, Automotive, Aeronautics & Aerospace, Downhole.
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