• Part: M12L128168A-7BVAG2S
  • Description: 2M x 16 Bit x 4 Banks Synchronous DRAM
  • Manufacturer: Elite Semiconductor Microelectronics Technology
  • Size: 1.02 MB
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Datasheet Summary

ESMT SDRAM Features - JEDEC standard 3.3V power supply - LVTTL patible with multiplexed address - Four banks operation - MRS cycle with address key programs - CAS Latency ( 2 & 3 ) - Burst Length ( 1, 2, 4, 8 & full page ) - Burst Type ( Sequential & Interleave ) - All inputs are sampled at the positive going edge of the system clock - Burst Read single write operation - DQM for masking - Auto & self refresh (self refresh is not supported for VA grade) - Refresh - 64 ms refresh period (4K cycle) for V grade -16 ms refresh period (4K cycle) for VA grade M12L128168A (2S) Automotive Grade 2M x 16 Bit x 4 Banks Synchronous DRAM GENERAL DESCRIPTION The M12L128168A is 134,217,728 bits...