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SDM4953 Datasheet Preview

SDM4953 Datasheet

Dual P-Channel Enhancement Mode Field Effect Transistor

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S DM4953
J ul 06 2005 ver1.2
Dual P -C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
VDS S
-30V
ID
-4.6A
R DS (ON) ( m W ) Max
53 @ VGS = -10V
95 @ VGS = - 4.5V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S urface Mount P ackage.
D1 D1 D2 D2
87 65
S O-8
1
1234
S1 G1 S2 G2
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous a @ TJ=25 C
-P ulsed b
Drain-S ource Diode Forward C urrent a
Maximum P ower Dissipation a
Operating Junction and S torage
Temperature R ange
S ymbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Limit
-30
20
-4.6
-23
1.7
2
-55 to 150
Unit
V
V
A
A
A
W
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient a
R JA
62.5
C /W
1




ETC

SDM4953 Datasheet Preview

SDM4953 Datasheet

Dual P-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

S DM4953
E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)
P a ra meter
S ymbol
C ondition
Min Typ C Max Unit
OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage BVDSS VGS =0V, ID =-250uA -30
V
Zero Gate Voltage Drain Current IDSS VDS =-24V, VGS =0V
-1 uA
Gate-Body Leakage
ON CHARACTERISTICS b
IGSS VGS = 20V, VDS= 0V
100 nA
Gate Threshold Voltage
VGS(th) VDS =VGS, ID = -250uA -1 -1.5 -3 V
Drain-S ource On-S tate R esistance R DS(ON)
VGS =-10V, ID= -4.6A
VGS =-4.5V, ID =-3.6A
43 53 m-ohm
70 95 m-ohm
On-S tate Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS c
ID(ON)
gFS
VDS = -5V, VGS = -10V
VDS =-15V, ID = - 4.6A
-15
9
A
S
Input Capacitance
C IS S
Output Capacitance
COSS
R everse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS c
VDS =-15V, VGS = 0V
f =1.0MHZ
860 PF
470 PF
180 PF
Turn-On Delay Time
R ise Time
Turn-Off Delay Time
Fall Time
tD(ON) VD = -15V,
tr
R L =15 ohm
ID = -1A,
tD(OFF) VGEN = -10V,
tf R GEN =6 ohm
9 ns
10 ns
37 ns
23 ns
Total Gate Charge
Qg VDS=-15V,ID =-4.6A,VGS=-10V
VDS=-15V,ID =-4.6A,VGS=-4.5V
15
8.9
nC
nC
Gate-S ource Charge
Gate-Drain Charge
Qgs VDS =-15V, ID = - 4.6A,
Qgd VGS =-10V
3 nC
4 nC
2


Part Number SDM4953
Description Dual P-Channel Enhancement Mode Field Effect Transistor
Maker ETC
Total Page 7 Pages
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