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SamHop Microelectronics Corp.

SDM4952 Datasheet Preview

SDM4952 Datasheet

Dual P-Channel Enhancement Mode Field Effect Transistor

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S DM4952
S amHop Microelectronics C orp.
March , 2003
Dual P -C hannel E nhancement Mode Field E ffect Transistor
P R ODUC T S UMMAR Y
VDS S
-20V
ID
-5.3A
R DS (ON) ( m W ) MAX
50 @ VGS = -4.5V
75 @ VGS = -2.7V
F E AT UR E S
S uper high dense cell design for low R DS(ON).
R ugged and reliable.
S urface Mount P ackage.
D1 D1 D2 D2
87 65
S O-8
1
1234
S1 G1 S2 G2
ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted)
P arameter
Drain-S ource Voltage
Gate-S ource Voltage
Drain C urrent-C ontinuous a @ TJ=125 C
-Pulsedb (300us Pulse Width)
Drain-S ource Diode Forward C urrent a
Maximum P ower Dissipation a
Operating Junction and S torage
Temperature R ange
S ymbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Limit
-20
12
5.3
21
2.5
2
-55 to 150
Unit
V
V
A
A
A
W
C
THE R MAL CHAR ACTE R IS TICS
Thermal R esistance, Junction-to-Ambient a
R JA
62.5
C /W
1




SamHop Microelectronics Corp.

SDM4952 Datasheet Preview

SDM4952 Datasheet

Dual P-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

S DM4952
E LE CTR ICAL CHAR ACTE R IS TICS (TA=25 C unless otherwise noted)
P a ra meter
OFF CHARACTERISTICS
Drain-S ource Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS b
Gate Threshold Voltage
S ymbol
BVDSS
IDSS
IGSS
V G S (th)
Drain-S ource On-S tate R esistance R DS(ON)
On-S tate Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICS c
ID(ON)
gFS
Input Capacitance
C IS S
Output Capacitance
COSS
R everse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICS c
Turn-On Delay Time
tD(ON)
R ise Time
tr
Turn-Off Delay Time
tD(O F F )
Fall Time
tf
Total Gate Charge
Qg
Gate-S ource Charge
Qgs
Gate-Drain Charge
Qgd
C ondition
Min Typ C Max Unit
VGS =0V, ID =-250uA
VDS =-16V, VGS =0V
VGS = 12V, VDS= 0V
-20
V
-1 uA
100 nA
VDS =VGS, ID = -250uA -0.7
V
VGS =-4.5V, ID= -2.9A
50 m-ohm
VGS =-2.7V, ID =-1.5A
75 m-ohm
VDS = -5V, VGS = -4.5V -20
A
VDS =-15V, ID = - 4.9A
13 S
VDS =-10V, VGS = 0V
f =1.0MHZ
1190 PF
700 PF
250 PF
VD = -10V,
R L =10 ohm
ID = -1A,
VGEN = -4.5V,
R GEN =6 ohm
VDS =-10V, ID = - 1A,
VGS =-4.5V
19 40 ns
18 70 ns
49 120 ns
28 130 ns
20 25 nC
3.7 nC
4.2 nC
2


Part Number SDM4952
Description Dual P-Channel Enhancement Mode Field Effect Transistor
Maker SamHop Microelectronics Corp.
Total Page 5 Pages
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