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STS2320 Datasheet Preview

STS2320 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

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STS2320
SamHop Microelectronics Corp.
Oct .29 2004 V1.1
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
VDSS
20V
ID
3.6A
RDS(ON) ( m W ) Max
45@ VGS = 4.5V
65@ VGS =2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
SOT-23 package.
SOT-23
D
S
G
D
G
S
ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuousa @TJ=25 C
-Pulsed b
Drain-Source Diode Forward Current a
Maximum Power Dissipation a
Operating Junction and Storage
Temperature Range
Symbol
VDS
VGS
ID
IDM
IS
PD
TJ, TSTG
Limit
20
10
3.6
14
1.25
1.25
-55 to 150
Unit
V
V
A
A
A
W
C
THERMAL CHARACTERISTICS
Thermal Resistance, Junction-to-Ambient a
RthJA
100
C/W
1




ETC

STS2320 Datasheet Preview

STS2320 Datasheet

N-Channel Enhancement Mode Field Effect Transistor

No Preview Available !

STS2320
ELECTRICAL CHARACTERISTICS (TA =25 C unless otherwise noted)
Parameter
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
ON CHARACTERISTICS b
Gate Threshold Voltage
Symbol
BVDSS
IDSS
IGSS
VGS(th)
Drain-Source On-State Resistance RDS(ON)
On-State Drain Current
Forward Transconductance
DYNAMIC CHARACTERISTICSc
ID(ON)
gFS
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
SWITCHING CHARACTERISTICSc
Turn-On Delay Time
tD(ON)
Rise Time
tr
Turn-Off Delay Time
tD(OFF)
Fall Time
Total Gate Charge
tf
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
Condition
VGS=0V, ID=250uA
VDS =16V, VGS=0V
VGS = 10V, VDS =0V
VDS=VGS, ID = 250uA
VGS =4.5V, ID= 3A
VGS = 2.5V, ID= 2A
VDS = 5V, VGS = 4.5V
VDS = 5V, ID=3A
VDS =15V, VGS = 0V
f =1.0MHZ
VDD = 10V,
ID = 1A,
VGS = 4.5V,
RL = 10 ohm
RGEN = 6 ohm
VDS =10V, ID = 3.5A,
VGS =4.5V
Min Typ C Max Unit
20 V
1 uA
100 nA
0.6 0.9
32
50
10
8
1.5 V
45 m-ohm
65 m-ohm
A
S
641 PF
135 PF
101 PF
19.6 ns
4 ns
26 ns
15.7 ns
9.1 nC
1.4 nC
3.2 nC
2


Part Number STS2320
Description N-Channel Enhancement Mode Field Effect Transistor
Maker ETC
Total Page 7 Pages
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