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PTB20009 Datasheet Preview

PTB20009 Datasheet

2.5 Watts/ 935-960 MHz Cellular Radio RF Power Transistor

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PTB 20009
2.5 Watts, 935–960 MHz
Cellular Radio RF Power Transistor
Description
The 20009 is a class AB, NPN, common emitter RF power transistor
intended for 24 Vdc operation across the 935 to 960 MHz frequency
band. Rated at 2.5 Watts minimum output power, it may be used for
both CW and PEP applications. Ion implantation, nitride surface
passivation and gold metallization are used to ensure excellent device
reliability. 100% lot traceability is standard.
• 2.5 Watts, 935–960 MHz
• Class AB Characteristics
• 50% Collector Efficiency at 2.5 Watts
• Gold Metallization
• Silicon Nitride Passivated
Typical Output Power vs. Input Power
6
5 VCC = 24 V
ICQ = 50 mA
4 f = 960 MHz
3
2
1
0
0.00 0.15 0.30 0.45 0.60 0.75
Input Power (Watts)
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
20009LOT CODE
Package 20206
Symbol
VCER
VCBO
VEBO
IC
PD
TSTG
RθJC
Value
40
50
4.0
1.7
13.5
0.077
–40 to +150
13.0
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
9/28/98
1




Ericsson

PTB20009 Datasheet Preview

PTB20009 Datasheet

2.5 Watts/ 935-960 MHz Cellular Radio RF Power Transistor

No Preview Available !

PTB 20009
Electrical Characteristics (100% Tested)
Characteristic
Breakdown Voltage C to E
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
Conditions
IB = 0 A, IC = 50 mA
VBE = 0 V, IC = 50 mA
IC = 0 A, IE = 5 mA
VCE = 5 V, IC = 250 A
Symbol
V(BR)CEO
V(BR)CES
V(BR)EBO
hFE
Min
25
55
3.5
20
RF Specifications (100% Tested)
Characteristic
Gain
(VCC = 24 Vdc, Pout = 2.5 W, ICQ = 50 mA, f = 935–960 MHz)
Collector Efficiency
(VCC = 24 Vdc, Pout = 2.5 W, ICQ = 50 mA, f = 935–960 MHz)
Load Mismatch Tolerance
(VCC = 24 Vdc, Pout = 2.5 W, ICQ = 50 mA, f = 935–960 MHz,
—all phase angles at frequency of test)
Symbol Min
Gpe 9
ηC 50
Ψ
Typical Performance
Gain & Efficiency vs. Frequency
(as measured in a broadband circuit)
13 80
12
Efficiency (%)
11
68
56
10
VCC = 24 V
9 ICQ = 50 mA
Pout = 2.5 W
Gain (dB)
8
920
930 940 950 960
Frequency (MHz)
44
32
20
970
e
Typ
30
70
5
50
Max
120
Units
Volts
Volts
Volts
Typ Max Units
10 12
——
dB
%
— 30:1
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
2
Specifications subject to change without notice.
LF
© Ericsson Components AB 1995
EUS/KR 1301-PTB 20009 Uen Rev. C 09-28-98


Part Number PTB20009
Description 2.5 Watts/ 935-960 MHz Cellular Radio RF Power Transistor
Maker Ericsson
Total Page 2 Pages
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