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Ericsson

PTB20051 Datasheet Preview

PTB20051 Datasheet

6 Watts/ 1.465-1.513 GHz Cellular Radio RF Power Transistor

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PTB 20051
6 Watts, 1.465–1.513 GHz
Cellular Radio RF Power Transistor
Description
The 20051 is a class AB, NPN, common emitter RF power transistor
intended for 26 Vdc operation from 1.465 to 1.513 GHz. Rated at 6
watts minimum output power, it may be used for both CW and PEP
applications. Ion implantation, nitride surface passivation and gold
metallization are used to ensure excellent device reliability. 100% lot
traceability is standard.
• 6 Watts, 1.465–1.513 GHz
• Class AB Characteristics
• 35% Collector Efficiency at 4 Watts
• Gold Metallization
• Silicon Nitride Passivated
Typical Output Power vs. Input Power
9.0
7.5
6.0
4.5
3.0 VCC = 26 V
ICQ = 40 mA
1.5 f = 1.501 GHz
0.0
0
0.5 1 1.5
Input Power (Watts)
2
20051LOT CODE
Package 20201
Maximum Ratings
Parameter
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage (collector open)
Collector Current (continuous)
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
Storage Temperature Range
Thermal Resistance (Tflange = 70°C)
Symbol
VCER
VCBO
VEBO
IC
PD
TSTG
RθJC
Value
50
50
4.0
0.7
28
0.16
–40 to +150
6.2
Unit
Vdc
Vdc
Vdc
Adc
Watts
W/°C
°C
°C/W
9/28/98
1




Ericsson

PTB20051 Datasheet Preview

PTB20051 Datasheet

6 Watts/ 1.465-1.513 GHz Cellular Radio RF Power Transistor

No Preview Available !

PTB 20051
Electrical Characteristics (100% Tested)
Characteristic
Breakdown Voltage C to E
Breakdown Voltage C to E
Breakdown Voltage E to B
DC Current Gain
Conditions
IB = 0 A, IC = 10 mA, RBE = 22
VBE = 0 V, IC = 10 mA
IC = 0 A, IE = 5 mA
VCE = 10 V, IC = 0.7 A
Symbol
V(BR)CER
V(BR)CES
V(BR)EBO
hFE
Min
50
50
4
20
RF Specifications (100% Tested)
Characteristic
Gain
(VCC = 26 Vdc, Pout = 4 W, ICQ = 40 mA, f = 1.501 GHz)
Power Output at 1 dB Compression
(VCC = 26 Vdc, ICQ = 40 mA, f = 1.501 GHz)
Collector Efficiency
(VCC = 26 Vdc, Pout = 4 W, ICQ = 40 mA, f = 1.501 GHz)
Load Mismatch Tolerance
(VCC = 26 Vdc, Pout = 4 W, ICQ = 40 mA,
f = 1.501 GHz—all phase angles at frequency of test)
Symbol Min
Gpe 8.0
P-1dB
6.5
ηC 35
Ψ
Impedance Data (data shown for fixed-tuned broadband circuit)
(VCC = 26 Vdc, Pout = 4 W, ICQ = 40 mA)
Z Source
Z Load
e
Typ
5
50
Max
120
Units
Volts
Volts
Volts
Typ Max Units
— — dB
— — Watts
——
%
— 5:1
Frequency
GHz
1.465
1.489
1.513
Z Source
R jX
10.7 11.2
9.4 11.8
8.1 12.8
Z Load
R jX
11.9 21.0
10.2 20.3
9.7 18.3
Ericsson Components
RF Power Products
675 Jarvis Drive
Morgan Hill, CA 95037 USA
Telephone: 408-778-9434
1-877-GOLDMOS
(1-877-465-3667)
e-mail: rfpower@ericsson.com
www.ericsson.com/rfpower
2
Specifications subject to change without notice.
LF
© Ericsson Components AB 1994
EUS/KR 1301-PTB 20051 Uen Rev. D 09-28-98


Part Number PTB20051
Description 6 Watts/ 1.465-1.513 GHz Cellular Radio RF Power Transistor
Maker Ericsson
Total Page 2 Pages
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