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PTB20017 150 Watts/ 860-900 MHz Cellular Radio RF Power Transistor

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Description

e PTB 20017 150 Watts, 860 *900 MHz Cellular Radio RF Power Transistor .
The 20017 is a class AB, NPN, common emitter RF power transistor intended for 25 Vdc operation across the 860 to 900 MHz cellular radio frequency band.

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Datasheet Specifications

Part number
PTB20017
Manufacturer
Ericsson
File Size
44.51 KB
Datasheet
PTB20017_Ericsson.pdf
Description
150 Watts/ 860-900 MHz Cellular Radio RF Power Transistor

Applications

* Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. • • • • • 150 Watts, 860
* 900 MHz Class AB Characteristics 50% Collector Efficiency at 150 Watts Gold Metallization Silicon Nitride Passi

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150 Watts 860-900 MHz Cellular Radio Power Transistor Ericsson
Ericsson PTB20017-like datasheet