PTB20146 - 0.4 Watt/ 1.8-2.0 GHz Cellular Radio RF Power Transistor

Description

The 20146 is a class A, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz.

Rated at 0.4 watt minimum output power, it may be used for both CW and PEP applications.

Ericsson

📥 Download Datasheet

Datasheet Details

Part number	PTB20146
Manufacturer	Ericsson
File Size	39.29 KB
Description	0.4 Watt/ 1.8-2.0 GHz Cellular Radio RF Power Transistor
Datasheet	PTB20146 Datasheet
Additional preview pages of the PTB20146 datasheet.

📁 Similar Datasheet

PTB23001X - NPN microwave power transistors (NXP)
PTB23002U - NPN microwave power transistor (NXP)
PTB23003X - NPN microwave power transistor (NXP)
PTB23003X - NPN microwave power transistors (NXP)
PTB23005X - NPN microwave power transistors (NXP)
PTB23006U - Microwave power transistor (NXP)
PTB100 - Low Profile Slide Potentiometer (Bourns)
PTB32001X - NPN microwave power transistors (NXP)
PTB32003X - NPN microwave power transistors (NXP)
PTB32005X - NPN microwave power transistors (NXP)

Other Datasheets by Ericsson

PTB20141 - 18 Watts/ 1.465-1.513 GHz Cellular Radio RF Power Transistor
PTB20144 - 6 Watts/ 915-960 MHz Cellular Radio RF Power Transistor
PTB20145 - 9 Watts/ 915-960 MHz Cellular Radio RF Power Transistor
PTB20147 - 2.5 Watts/ 1.8-2.0 GHz Cellular Radio RF Power Transistor
PTB20148 - 60 Watts/ 925-960 MHz Cellular Radio RF Power Transistor
PTB20101 - 175 Watts P-Sync/ 470-860 MHz UHF TV Power Transistor
PTB20105 - 20 Watts/ 925-960 MHz Cellular Radio RF Power Transistor
PTB20111 - 85 Watts/ 860-900 MHz Cellular Radio RF Power Transistor

Full PDF Text Transcription

Click to expand full text

e PTB 20146 0.4 Watt, 1.8–2.0 GHz Cellular Radio RF Power Transistor Description The 20146 is a class A, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.8 to 2.0 GHz. Rated at 0.4 watt minimum output power, it may be used for both CW and PEP applications. Ion implantation, nitride surface passivation and gold metallization are used to ensure excellent device reliability. 100% lot traceability is standard. 0.4 Watt, 1.8–2.0 GHz Class A Characteristics Tested to solderability standards: - IEC-68-2-54 - ANSI/J Std-002-A Gold Metallization Silicon Nitride Passivated Surface Mountable Available in Tape and Reel Typical Output Power vs. Input Power 1.0 VCC = 26 V Output Power (Watts) 0.8 0.6 0.4 0.2 0.0 0.00 ICQ = 140 mA f = 2.

Published: Apr 16, 2005 |