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PTF10134 - 100 Watts/ 2.1-2.2 GHz GOLDMOS Field Effect Transistor

Description

The PTF 10134 is an internally matched GOLDMOS FET intended for WCDMA applications from 2.1 to 2.2 GHz.

It is rated at 100 watts power output and operates with 10 dB typical gain.

Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability.

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Datasheet Details

Part number PTF10134
Manufacturer Ericsson
File Size 318.86 KB
Description 100 Watts/ 2.1-2.2 GHz GOLDMOS Field Effect Transistor
Datasheet download datasheet PTF10134 Datasheet
Additional preview pages of the PTF10134 datasheet.

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Full PDF Text Transcription

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PTF 10134 100 Watts, 2.1–2.2 GHz GOLDMOS ® Field Effect Transistor Description The PTF 10134 is an internally matched GOLDMOS FET intended for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 100 watts power output and operates with 10 dB typical gain. Nitride surface passivation and gold metallization ensure excellent device lifetime and reliability. • • INTERNALLY MATCHED Guaranteed Performance at 2.17 GHz, 28 V - Output Power = 100 Watts Min - Power Gain = 10 dB Typ Full Gold Metallization Excellent Thermal Stability 100% Lot Traceability • • • Typical Output Power & Efficiency vs. Input Power 120 Output Power 100 40 Efficiency 32 24 48 Output Power (Watts) 80 60 40 20 0 0 2 4 6 8 Efficiency (%) X 1234 101 569934 53 A VDD = 28 V IDQ = 1.
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