EIB1213-4P - Internally Matched Power FET

Features

12.75-13.25 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.0 dBm Output Power at 1dB Compression 8.5 dB Power Gain at 1dB Compression 25% Power Added Efficiency -46 dBc IM3 at PO = 25.0 dBm SCL Non-Hermetic Metal Flange Package EIB1213-4P.

Excelics Semiconductor

Datasheet Details

Part number	EIB1213-4P
Manufacturer	Excelics Semiconductor
File Size	114.73 KB
Description	Internally Matched Power FET
Datasheet	EIB1213-4P Datasheet
Additional preview pages of the EIB1213-4P datasheet.

📁 Similar Datasheet

EIB-TP-UART-IC - TP-UART-IC (Siemens Semiconductor)

Other Datasheets by Excelics Semiconductor

EIB1213-2P - Internally Matched Power FET
EIB1011-2P - Internally Matched Power FET
EIB1011-4P - Internally Matched Power FET
EIB1011-4P - 10.7-11.7GHz 4W Internally Matched Power FET
EIB1314-2P - Internally Matched Power FET
EIB1314-2P - 13.75-14.5 GHz 2-W Internally Matched Power FET
EIB1314-4P - Internally Matched Power FET
EIB1314-4P - 13.75-14.5 GHz 4W Internally Matched Power FET

Full PDF Text Transcription

Click to expand full text

EIB1213-4P UPDATED 06/14/06 12.75-13.25GHz 4W Internally Matched Power FET FEATURES • • • • • • • 12.75-13.25 GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +36.0 dBm Output Power at 1dB Compression 8.5 dB Power Gain at 1dB Compression 25% Power Added Efficiency -46 dBc IM3 at PO = 25.0 dBm SCL Non-Hermetic Metal Flange Package EIB1213-4P ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS VP www.DataSheet4U.com Caution! ESD sensitive device. MIN 35.0 7.50 PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 12.75-13.25GHz VDS = 8 V, IDSQ ≈ 1600mA Gain at 1dB Compression f = 12.75-13.25GHz VDS = 8 V, IDSQ ≈ 1600mA Gain Flatness f = 12.75-13.25GHz VDS = 8 V, IDSQ ≈ 1600mA Power Added Efficiency at 1dB Compression f = 12.75-13.

Published: Nov 20, 2009 |