Datasheet4U Logo Datasheet4U.com

EIB1415-0.3P - Internally Matched Power FET

This page provides the datasheet information for the EIB1415-0.3P, a member of the EIB1415-03P Internally Matched Power FET family.

Features

  • 14.0.
  • 14.5GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +26.0 dBm Output Power at 1dB Compression 8.0 dB Power Gain at 1dB Compression 32% Power Added Efficiency Non - Hermetic Metal Flange Package 0.433 0.362 GATE YYWW SN 0.070 0.256 0.200 0.004 0.051 0.025 0.100 ALL.

📥 Download Datasheet

Datasheet preview – EIB1415-0.3P

Datasheet Details

Part number EIB1415-0.3P
Manufacturer Excelics Semiconductor
File Size 109.76 KB
Description Internally Matched Power FET
Datasheet download datasheet EIB1415-0.3P Datasheet
Additional preview pages of the EIB1415-0.3P datasheet.

📁 Similar Datasheet

Other Datasheets by Excelics Semiconductor

Full PDF Text Transcription

Click to expand full text
EIB1415-0.3P UPDATED 8/31/2006 14.0-14.5 GHz 0.3-Watt Internally Matched Power FET 0.080 MIN Excelics EIB1415-0.3P 0.080 MIN DRAIN 0.020 0.250 FEATURES • • • • • • 14.0– 14.5GHz Bandwidth Input/Output Impedance Matched to 50 Ohms +26.0 dBm Output Power at 1dB Compression 8.0 dB Power Gain at 1dB Compression 32% Power Added Efficiency Non - Hermetic Metal Flange Package 0.433 0.362 GATE YYWW SN 0.070 0.256 0.200 0.004 0.051 0.025 0.100 ALL DIMENSIONS IN INCHES ELECTRICAL CHARACTERISTICS (Ta = 25°C) SYMBOL P1dB G1dB ∆G PAE Id1dB IM3 IDSS RTH PARAMETERS/TEST CONDITIONS1 Output Power at 1dB Compression f = 14.0-14.5GHz VDS = 8 V, IDSQ ≈ 120mA Gain at 1dB Compression f = 14.0-14.5GHz VDS = 8 V, IDSQ ≈ 120mA Gain Flatness f = 14.0-14.
Published: |