900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf






Excelics Semiconductor

EIC8596-4 Datasheet Preview

EIC8596-4 Datasheet

Internally Matched Power FET

No Preview Available !

www.DataSheet4U.com
EIC8596-4
8.50-9.60 GHz 4-Watt Internally-Matched Power FET
Issued Date: 06-07-04
FEATURES
8.50 – 9.60 GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+36.5 dBm Output Power at 1dB Compression
7.5 dB Power Gain at 1dB Compression
30% Power Added Efficiency
-43 dBc IM3 at Po = 25.5 dBm SCL
Hermetic Metal Flange Package
100% Tested for DC, RF, and RTH
DESCRIPTION
The EIC8596-4 is a high power, highly linear,
single stage MFET amplifier in a flange mount
package. This amplifier features Excelics’ unique
MESFET transistor technology.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
G
PAE
Output Power at 1dB Compression f = 8.50-9.60GHz
VDS = 10 V, IDSQ 1100mA
Gain at 1dB Compression
f = 8.50-9.60GHz
VDS = 10 V, IDSQ 1100mA
Gain Flatness
f = 8.50-9.60GHz
VDS = 10 V, IDSQ 1100mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ 1100mA
f = 8.50-9.60GHz
Id1dB
Drain Current at 1dB Compression f = 8.50-9.60GHz
Output 3rd Order Intermodulation Distortion
IM3 f = 10 MHz 2-Tone Test; Pout = 25.5 dBm S.C.L2
VDS = 10 V, IDSQ 65% IDSS
f = 9.60 GHz
IDSS Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
VDS = 3 V, IDS = 20 mA
RTH Thermal Resistance3
Notes:
1. Tested with 100 Ohm gate resistor.
2. S.C.L. = Single Carrier Level.
3. Overall Rth depends on case mounting.
MIN
35.5
6.5
-40
TYP
36.5
7.5
30
1100
-43
1800
-2.5
5.0
MAX
UNITS
dBm
dB
±0.6 dB
1300
%
mA
dBc
2200
-4.0
6.0
mA
V
oC/W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4
Revised July 2004




Excelics Semiconductor

EIC8596-4 Datasheet Preview

EIC8596-4 Datasheet

Internally Matched Power FET

No Preview Available !

www.DataSheet4U.com
EIC8596-4
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2
SYMBOL
CHARACTERISTIC
VALUE
VDS Drain to Source Voltage
10 V
VGS Gate to Source Voltage
-4.5 V
IDS Drain Current
IDSS
IGSF Forward Gate Current
40 mA
PIN Input Power
@ 3dB compression
PT Total Power Dissipation
20 W
TCH Channel Temperature
150°C
TSTG
Storage Temperature
-65/+150°C
Notes:
1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
2. Bias conditions must also satisfy the following equation PT < (TCH –TPKG)/RTH; where TPKG = temperature of package, and
PT = (VDS * IDS) – (POUT – PIN).
PERFORMANCE DATA
Typical S-Parameters (T= 25°C, 50system, de-embedded to edge of package)
VDS = 10 V, IDSQ 1100mA
-3.0
-4.0
-5.0
-10.0
S11 and S22
Swp Max
10GHz
3.0
4.0
5.0
10.0
20
10
0
-10
S21 and S12
DB(|S[2,1]|) *
EIC8596-4
DB(|S[1,2]|) *
EIC8596-4
-0.2
-0.4
FREQ
(GHz)
8.00
8.25
8.50
8.75
9.00
9.25
9.50
9.75
10.00
10.25
10.50
S[1,1] *
EIC8596-4
S[2,2] *
EIC8596-4
0.2
0.4
Swp Min
8GHz
-20
-30
8
--- S11 ---
MAG
ANG
0.639 -131.090
0.589 -162.210
0.553
167.390
0.535
138.050
0.516
111.210
0.479
86.150
0.406
62.550
0.292
36.850
0.123
5.160
0.085 -167.640
0.278
157.010
--- S21 ---
MAG
ANG
2.971
-43.850
3.029
-71.870
3.042
-98.890
2.997 -125.900
2.947 -152.010
2.924 -178.400
2.918
154.530
2.901
125.240
2.779
94.570
2.588
62.670
2.245
31.830
8.5 9 9.5
Frequency (GHz)
10
--- S12 ---
MAG
ANG
0.075
-95.770
0.085 -125.560
0.095 -152.800
0.103 -179.370
0.107
155.110
0.115
128.390
0.119
102.590
0.127
74.230
0.128
44.690
0.123
13.470
0.112
-17.580
--- S22 ---
MAG
ANG
0.381
79.650
0.387
47.150
0.384
17.300
0.364
-10.280
0.331
-38.730
0.308
-71.620
0.309 -108.380
0.336 -152.650
0.403
163.780
0.499
126.800
0.564
94.870
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 4
Revised July 2004


Part Number EIC8596-4
Description Internally Matched Power FET
Maker Excelics Semiconductor
PDF Download

EIC8596-4 Datasheet PDF






Similar Datasheet

1 EIC8596-12 Internally Matched Power FET
Excelics Semiconductor
2 EIC8596-15 Internally Matched Power FET
Excelics Semiconductor
3 EIC8596-2 Internally Matched Power FET
Excelics Semiconductor
4 EIC8596-4 Internally Matched Power FET
Excelics Semiconductor
5 EIC8596-8 Internally Matched Power FET
Excelics Semiconductor





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy