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EID1314A1-5 Datasheet Preview

EID1314A1-5 Datasheet

13.75-14.50 GHz 5-Watt Internally-Matched Power FET

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UPDATED 07/12/2007
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EID1314A1-5
13.75-14.50 GHz 5-Watt Internally-Matched Power FET
FEATURES
13.75-14.50 GHz Bandwidth
Input/Output Impedance Matched to 50 Ohms
+37.5 dBm Output Power at 1dB Compression
7.5 dB Power Gain at 1dB Compression
35% Power Added Efficiency
Hermetic Metal Flange Package
100% Tested for DC, RF, and RTH
DESCRIPTION
The EID1314A1-5 is a high power, highly linear,
single stage MFET amplifier in a flange mount
package. This amplifier features Excelics’ unique
PHEMT transistor technology.
Caution! ESD sensitive device.
ELECTRICAL CHARACTERISTICS (Ta = 25°C)
SYMBOL
PARAMETERS/TEST CONDITIONS1
P1dB
G1dB
G
PAE
Output Power at 1dB Compression f = 13.75-14.50GHz
VDS = 10 V, IDSQ = 1200mA
Gain at 1dB Compression
f = 13.75-14.50GHz
VDS = 10 V, IDSQ = 1200mA
Gain Flatness
f = 13.75-14.50GHz
VDS = 10 V, IDSQ = 1200mA
Power Added Efficiency at 1dB Compression
VDS = 10 V, IDSQ = 1200mA
f = 13.75-14.50GHz
Id1dB
Drain Current at 1dB Compression f = 13.75-14.50GHz
IDSS Saturated Drain Current
VDS = 3 V, VGS = 0 V
VP Pinch-off Voltage
RTH Thermal Resistance2
Notes:
1. Tested with 100 Ohm gate resistor.
2. Overall Rth depends on case mounting.
VDS = 3 V, IDS = 20 mA
MIN
37.0
6.5
TYP
37.5
7.5
35
1400
2080
-2.5
5.5
MAX
UNITS
dBm
dB
±0.6 dB
%
1800 mA
2880 mA
-4.0 V
6.0 oC/W
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 1 of 4
Revised July 2007




Excelics Semiconductor

EID1314A1-5 Datasheet Preview

EID1314A1-5 Datasheet

13.75-14.50 GHz 5-Watt Internally-Matched Power FET

No Preview Available !

www.DataSheet4U.com
UPDATED 07/12/2007
EID1314A1-5
13.75-14.50 GHz 5-Watt Internally-Matched Power FET
ABSOLUTE MAXIMUM RATINGS FOR CONTINUOUS OPERATION1,2
SYMBOL
CHARACTERISTIC
VALUE
VDS Drain to Source Voltage
10 V
VGS Gate to Source Voltage
-4.5 V
IDS Drain Current
IDSS
IGSF Forward Gate Current
40 mA
PIN Input Power
@ 3dB compression
PT Total Power Dissipation
23 W
TCH Channel Temperature
150°C
TSTG
Storage Temperature
-65/+150°C
Notes:
1. Operating the device beyond any of the above ratings may result in permanent damage or reduction of MTTF.
2. Bias conditions must also satisfy the following equation PT < (TCH –TPKG)/RTH; where TPKG = temperature of package, and
PT = (VDS * IDS) – (POUT – PIN).
PERFORMANCE DATA
Typical S-Parameters (T= 25°C, 50system, de-embedded to edge of package)
VDS = 10 V, IDSQ = 1200mA
S11 and S22
Swp Max
15GHz
20
S21 and S12
-3.0
-4.0
-5.0
-10.0
-0.2
3.0
4.0
5.0
10.0
0.2
10
0
-10
-20
DB(|S[2,1]|) *
EID1314-5
DB(|S[1,2]|) *
EID1314-5
-0.4 S[1,1] *
0.4
EID1314-5
S[2,2] *
EID1314-5
Swp Min
13GHz
-30
13
13.5 14 14.5
Frequency (GHz)
15
FREQ
(GHz)
13.0
13.2
13.4
13.6
13.8
14.0
14.2
14.4
14.6
14.8
15.0
--- S11 ---
MAG
ANG
0.4637
-51.26
0.4333
-64.29
0.3930
-77.23
0.3380
-90.79
0.2552 -105.20
0.1524 -122.48
0.0411 -169.43
0.1025
54.46
0.2214
33.93
0.3322
20.00
0.4199
7.64
--- S21 ---
MAG
ANG
2.2673 -134.00
2.3733 -147.22
2.4853 -161.29
2.5944 -176.44
2.6962
167.96
2.7628
151.12
2.7844
133.47
2.7359
115.60
2.6150
98.28
2.4814
81.16
2.3055
64.97
--- S12 ---
MAG
ANG
-0.0465 148.59
-0.0500 162.65
-0.0561 176.02
0.0603
170.24
0.0630
153.33
0.0694
136.76
0.0703
119.55
0.0691
101.22
0.0693
84.19
0.0659
66.29
0.0616
52.11
--- S22 ---
MAG
ANG
0.6281 -127.18
0.5868 -135.36
0.5354 -144.04
0.4755 -153.89
0.3950 -166.55
0.3036
177.97
0.2036
152.97
0.1352
109.08
0.1428
53.54
0.2059
19.24
0.2685
-0.63
Specifications are subject to change without notice.
Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085
Phone: 408-737-1711 Fax: 408-737-1868 Web: www.excelics.com
page 2 of 4
Revised July 2007


Part Number EID1314A1-5
Description 13.75-14.50 GHz 5-Watt Internally-Matched Power FET
Maker Excelics Semiconductor
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EID1314A1-5 Datasheet PDF





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