Description | Q1 Q2 BVDSS 30V 30V RDSON (MAX.)@VGS=10V RDSON (MAX.)@VGS=4.5V 7.0mΩ 4.0mΩ 9.4mΩ 5.4mΩ ID @TC=25℃ 41A 60A ID @TA=25℃ 16A 21A Dual N Channel MOSFET UIS, Rg 100% Tested Pb-Free Lead Plating & Halogen Free ▪ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Q1 Q2 Gate-Source Voltage Continuous Drain Current Continuous Drain Curr... |
Features |
sting in condition of VD=15V, L=0.1mH, VG=10V, IL=21A, Rated VDS=30V N-CH_Q1
▪100% UIS testing in condition of VD=15V, L=0.1mH, VG=10V, IL=32A, Rated VDS=30V N-CH_Q2
▪THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE
SYMBOL TYPICAL
MAXIMUM
Q1
Q2
Junction-to-Case
RθJC
Junction-to-Ambient3
t≦10s
RθJA
Steady-State
RθJA
1Pulse width limited ...
|
Datasheet |
![]() |