* of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25oC and 150oC. The diode used in anti-parallel with the IGBT is the RHRP3060. The
G20N60B3D Datasheet (179.53 KB)
G20N60B3D
Fairchild
179.53 KB
40a / 600v / ufs series n-channel igbt with anti-parallel hyperfast diode.
HGTG20N60B3D Data Sheet December 2001 40A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The HGTG20N60B3D is a MOS gated high vo.
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