G20N60B3D diode equivalent, 40a / 600v / ufs series n-channel igbt with anti-parallel hyperfast diode.
of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-st.
operating at moderate frequencies where low conduction losses are essential. Formerly developmental type TA49016.
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