N-Ch 3.8 A, 30 V, RDS(ON)=0.033Ω @ VGS=10 V RDS(ON)=0.05 Ω @ VGS=4.5 V P-Ch -2.7 A, -30 V,RDS(ON)=0.07 Ω @ VGS=-10 V RDS(ON)=0.115 Ω @ VGS=-4.5 V. Proprietary SuperSOTTM-.

such as notebook computer power management and other battery powered circuits where fast switching, low in-line power lo.

These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and prov.

&P-Channel

NDH8520C

NDH8502P

NDH8503N

NDH8504P

NDH853N

NDH854P

NDH8301N

NDH8303N

NDH8304

NDH8304P

NDH831N

NDH8320C

NDH8321C