-2.2 A, -30 V. RDS(ON) = 0.11 Ω @ VGS = -10 V RDS(ON) = 0.18 Ω @ VGS = -4.5 V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and el.

such as notebook computer power management and other battery powered circuits where fast high-side switching, and low in.

SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These device.

NDH8503N

NDH8504P

NDH8520C

NDH8521C

NDH853N

NDH854P

NDH8301N

NDH8303N

NDH8304

NDH8304P

NDH831N

NDH8320C

NDH8321C