NDH8503N Overview
Description
SuperSOT -8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance.
Key Features
- RDS(ON) = 0.033 Ω @ VGS = 10 V RDS(ON) = 0.05 Ω @ VGS = 4.5 V
- Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and electrical capabilities
- High density cell design for extremely low RDS(ON)
- Exceptional on-resistance and maximum DC current capability
