N-Channel 3 A, 20 V, RDS(ON)=0.06 Ω @ VGS=4.5 V RDS(ON)=0.075 Ω @ VGS=2.7 V P-Channel -2A, -20V, RDS(ON)=0.13 Ω @ VGS=-4.5 V RDS(ON)=0.19 Ω @ VGS=-2.7 V. Proprietary Supe.

such as notebook computer power management and other battery powered circuits where fast switching, low in-line power lo.

These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and pro.

&P-Channel

NDH8321C

NDH832P

NDH8301N

NDH8303N

NDH8304

NDH8304P

NDH831N

NDH833N

NDH834P

NDH8436

NDH8447

NDH8502P

NDH8503N