-4.4A, -30V. RDS(ON) = 0.053 @ VGS = -10V RDS(ON) = 0.095Ω @ VGS = -4.5V High density cell design for extremely low RDS(ON). Enhanced SuperSOTTM-8 small outline surface m.

such as notebook computer power management and other battery powered circuits where fast switching, low in-line power lo.

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior.

NDH8436

NDH8301N

NDH8303N

NDH8304

NDH8304P

NDH831N

NDH8320C

NDH8321C

NDH832P

NDH833N

NDH834P

NDH8502P

NDH8503N