7.1 A, 20 V. RDS(ON) = 0.020 Ω @ VGS = 4.5 V RDS(ON) = 0.025 Ω @ VGS = 2.7 V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and ele.

such as battery powered circuits or portable electronics where fast switching, low in-line power loss, and resistance to.

SuperSOT -8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide su.

NDH8301N

NDH8303N

NDH8304

NDH8304P

NDH831N

NDH8320C

NDH8321C

NDH832P

NDH834P

NDH8436

NDH8447

NDH8502P

NDH8503N

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