NDH831N Datasheet | Fairchild Semiconductor

Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications such as notebook puter power management and portable electronics where fast switching, low in-line power loss, and resistance to transients are needed. Features 5.8A, 20V. RDS(ON) = 0.03Ω @ VGS = 4.5V RDS(ON) = 0.04Ω @ VGS = 2.7V. High density cell design for extremely low RDS(ON). Enhanced Super SOTTM-8 small outline surface mount package with high power and current handling capability. 5 6 7 8 4 3 2 1 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Maximum Power Dissipation (Note 1a) (Note 1b) (Note 1c) (Note 1a) NDH831N 20 8 5.8 20 1.8 1 0.9 -55 to 150 Units V V A TJ,TSTG Operating and Storage Temperature Range °C THERMAL CHARACTERISTICS RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 70 20 °C/W °C/W © 1997 Fairchild Semiconductor Corporation NDH831N Rev. D ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHARACTERISTICS BVDSS IDSS IGSSF IGSSR VGS(th) RDS(ON) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = 250 µA VDS = 16 V, VGS = 0 V TJ= 55°C Gate - Body Leakage, Forward Gate - Body Leakage, Reverse VGS = 8 V, VDS = 0 V VGS = -8 V, VDS= 0 V VDS = VGS, ID = 250 µA TJ= 125°C Static Drain-Source On-Resistance VGS = 4.5 V, ID = 5.8 A TJ= 125°C VGS = 2.7 V, ID = 5 A ID(on) g FS Ciss Coss Crss t D(on) tr t D(off) tf Qg Qgs Qgd On-State Drain...