NDH831N - N-Channel MOSFET

Fairchild

Datasheet Details

Part number	NDH831N
Manufacturer	Fairchild ↗
File Size	221.88 KB
Description	N-Channel MOSFET
Datasheet	NDH831N_FairchildSemiconductor.pdf

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.

5.8A, 20V. RDS(ON) = 0.03Ω @ VGS = 4.5V RDS(ON) = 0.04Ω @ VGS = 2.7V. High density cell design for extremely low RDS(ON). Enhanced SuperSOTTM-8 small outline surface mount package with high power and current handling capability. ____________________________________________________________________________________________ 5 6 7 8 4 3 2 1 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current - Continuou.

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Published: May 12, 2005 |