-4.2A, -20V. RDS(ON) = 0.06Ω @ VGS = -4.5V RDS(ON) = 0.08Ω @ VGS = -2.7V. High density cell design for extremely low RDS(ON). Enhanced SuperSOTTM-8 small outline surface .

such as notebook computer power management and other battery powered circuits where fast switching, low in-line power lo.

These P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior.

NDH8320C

NDH8321C

NDH8301N

NDH8303N

NDH8304

NDH8304P

NDH831N

NDH833N

NDH834P

NDH8436

NDH8447

NDH8502P

NDH8503N