-5.6 A, -20 V. RDS(ON) = 0.035 Ω @ VGS = -4.5 V RDS(ON) = 0.045 Ω @ VGS = -2.7V. Proprietary SuperSOTTM-8 package design using copper lead frame for superior thermal and .

such as battery powered circuits or portable electronics where fast switching, low in-line power loss, and resistance to.

SuperSOTTM-8 P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide s.

NDH8301N

NDH8303N

NDH8304

NDH8304P

NDH831N

NDH8320C

NDH8321C

NDH832P

NDH833N

NDH8436

NDH8447

NDH8502P

NDH8503N