NDP6020 transistor equivalent, n-channel logic level enhancement mode field effect transistor.
35 A, 20 V. RDS(ON) = 0.023 Ω @ VGS= 4.5 V RDS(ON) = 0.028 Ω @ VGS= 2.7 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-dra.
such as automotive, DC/DC converters, PWM motor controls, and other battery powered circuits where fast switching, low i.
These logic level N-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance, pr.
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