NDP6030PL transistor equivalent, p-channel logic level enhancement mode field effect transistor.
-30 A, -30 V. RDS(ON) = 0.042 Ω @ VGS= -4.5 V RDS(ON) = 0.025 Ω @ VGS= -10 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-.
such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resist.
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