NDP6030 - N-Channel Logic Level Enhancement Mode Field Effect Transistor
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
This very high density process has been especially tailored to minimize on-state resistance and provide superior switching performance.
These devices are pa
NDP6030 Features
* 46 A, 30 V. RDS(ON) = 0.018 @ VGS=10 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for an external Zener diode transient suppressor. 175°C maximum junction temperature rating. High density cell design for extremely l
