46 A, 30 V. RDS(ON) = 0.018 @ VGS=10 V. Critical DC electrical parameters specified at elevated temperature. Rugged internal source-drain diode can eliminate the need for.

such as DC/DC converters and other battery powered circuits where fast switching, low in-line power loss, and resistance.

These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been especially tailored to minimize on-state resistance and provide su.

NDP6030L

NDP6030PL

NDP603AL

NDP6020

NDP6020P

NDP6050

NDP6050L

NDP6051

NDP605A

NDP605B

NDP6060

NDP6060L

NDP606A