p-channel enhancement mode field effect transistor.
* −0.18A, −60V. RDS(ON) = 5 Ω @ VGS = −10 V
* Voltage controlled p-channel small signal switch
* High density cell design for low RDS(ON)
* High saturatio.
requiring up to 180mA DC and can deliver current up to 1A. This product is particularly suited to low voltage applicatio.
These P-Channel enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize onstate resistance, provide rugged and reliable per.
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