8.6 A, 30 V. RDS(ON) = 0.02 Ω @ VGS = 10 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount .

such as notebook computer power management and other battery powered circuits where fast switching, low in-line power lo.

SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior .

NDS8410

NDS8410A

NDS8425

NDS8426

NDS8426A

NDS8433

NDS8434

NDS8434A

NDS8435

NDS8435A

NDS8839H

NDS8852H

NDS8858H