NDS8410A Datasheet - Fairchild

NDS8410A Single 30V N-Channel PowerTrench MOSFET

This N-Channel MOSFET are produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particularly suited for low voltage applications s.

NDS8410A Features

* 10.8 A, 30 V RDS(ON) = 12 mΩ @ VGS = 10 V RDS(ON) = 17 mΩ @ VGS = 4.5 V

* Ultra-low gate charge

* High performance trench technology for extremely low RDS(ON)

* High power and current handling capability DD DD DD DD SO-8 Pin 1 SO-8 SS SS SS GG 54 63 72 81 Absol

NDS8410A_FairchildSemiconductor.pdf