NDS8410S Datasheet - Fairchild

NDS8410S Single N-channel MOSFET

SO-8 N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance and provide superior switching performance. These devices are particula.

NDS8410S Features

* 8.6 A, 30 V. RDS(ON) = 0.02 Ω @ VGS = 10 V. High density cell design for extremely low RDS(ON). High power and current handling capability in a widely used surface mount package. ____________________________________________________________________________________________ 5 6 7 8 4 3 2 1 ABSOLUTE

NDS8410S_FairchildSemiconductor.pdf