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Fairchild Semiconductor Electronic Components Datasheet

2N7002KW Datasheet

N-channel MOSFET

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May 2011
2N7002KW
N-Channel Enhancement Mode Field Effect Transistor
Features
• Low On-Resistance
• Low Gate Threshold Voltage
• Low Input Capacitance
• Fast Switching Speed
• Low Input/Output Leakage
• Ultra-Small Surface Mount Package
• Pb Free/RoHS Compliant
• ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101
D
S
G SOT-323
Marking : 7KW
Absolute Maximum Ratings * TA = 25°C unless otherwise noted
Symbol
Parameter
Value
Units
VDSS
VGSS
ID
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current
- Continuous
TJ = 100°C
- Pulsed
60
±20
310
195
1.2
V
V
mA
mA
A
TJ
TSTG
Operating Junction Temperature Range
Storage Temperature Range
-55 to +150
-55 to +150
°C
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may by impaired.
Thermal Characteristics
Symbol
Parameter
Value
PD
RθJA
Total Device Dissipation
Derating above TA = 25°C
Thermal Resistance, Junction to Ambient *
300
2.4
410
* Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. Minimum land pad size
Units
mW
mW/°C
°C/W
© 2011 Fairchild Semiconductor Corporation
2N7002KW Rev. A0
1
www.fairchildsemi.com


Fairchild Semiconductor Electronic Components Datasheet

2N7002KW Datasheet

N-channel MOSFET

No Preview Available !

Electrical Characteristics TA = 25°C unless otherwise noted
Symbol
Parameter
Test Condition
Off Characteristics
BVDSS Drain-Source Breakdown Voltage VGS = 0V, ID =10μA
IDSS
Zero Gate Voltage Drain Current VDS = 60V, VGS = 0V
VDS = 60V, VGS = 0V, TJ = 125°C
IGSS Gate-Body Leakage
VGS = ±20V, VDS = 0V
On Characteristics (Note1)
VGS(th) Gate Threshold Voltage
RDS(ON) Static Drain-Source
On-Resistance
VDS(ON) Drain-Source On-Voltage
ID(ON) On-State Drain Current
gFS Forward Transconductance
Dynamic Characteristics
VDS = VGS, ID = 250μA
VGS = 10V, ID = 500mA
VGS = 10V, ID = 500mA, TJ = 100°C
VGS = 5V, ID = 50mA
VGS = 5V, ID = 50mA, TJ = 100°C
VGS = 10V, ID = 500mA
VGS = 5V, ID = 50mA
VGS = 10V, VDS = 2V
VDS = 2V, ID = 0.2A
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
Switching Characteristics
VDS = 25V, VGS= 0V, f = 1.0MHz
tD(ON) Turn-On Delay Time
tD(OFF) Turn-Off Delay Time
VDD = 30V, RL = 150Ω, VGS= 10V,
ID = 200mA, RGEN = 25Ω
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current
ISM Maximum Pulsed Drain-Source Diode Forward Current
VSD Drain-Source Diode Forward
Voltage
VGS = 0V, IS = 115mA
Min.
60
1.1
500
80
Note1 : 1. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
Typ.
Max. Units
V
1.0 μA
0.5 mA
±10 μA
2.1 V
1.6 Ω
2.4 Ω
2Ω
3Ω
3.75 V
1.5 V
mA
mS
50 pF
25 pF
5 pF
20 ns
60 ns
115 mA
0.8 A
1.1 V
© 2011 Fairchild Semiconductor Corporation
2N7002KW Rev. A0
2
www.fairchildsemi.com


Part Number 2N7002KW
Description N-channel MOSFET
Maker Fairchild Semiconductor
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2N7002KW Datasheet PDF






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