FDB024N08BL7 Datasheet - Fairchild Semiconductor

MOSFET

FDB024N08BL7 Features

* RDS(on) = 1.7 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A

* Low FOM RDS(on)

* QG

* Low Reverse Recovery Charge, Qrr = 112 nC

* Soft Reverse Recovery Body Diode

* Enables Highly Efficiency in Synchronous Rectification

* Fast Switching Speed

* RoHS

FDB024N08BL7 General Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications * Synchronous Rectification for ATX / Server / Telecom PSU * Batter.

FDB024N08BL7 Datasheet (569.68 KB)

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FDB024N08BL7

Manufacturer:

Fairchild Semiconductor

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569.68 KB

Description:

Mosfet.

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FDB024N08BL7 MOSFET Fairchild Semiconductor

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FDB024N08BL7 Features

FDB024N08BL7 General Description

Datasheet Details

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