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FDB024N08BL7 Key Features

  • RDS(on) = 1.7 mΩ ( Typ.) @ VGS = 10 V, ID = 100 A
  • Low FOM RDS(on) -QG
  • Low Reverse Recovery Charge, Qrr = 112 nC
  • Soft Reverse Recovery Body Diode
  • Enables Highly Efficiency in Synchronous Rectification
  • Fast Switching Speed
  • RoHS pliant
  • Qualified according to JEDEC Standards JESD22-A113F and IPC/JEDEC J-STD-020D.1

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FDB024N08BL7 Description

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. Applications Synchronous Rectification for ATX / Server / Tele PSU Battery Protection Circuit Motor drives and Uninterruptible Power Supplies 123 567 4 D2-PAK (TO-263) 1. Package limitation current is 120.

FDB024N08BL7 Applications

  • Synchronous Rectification for ATX / Server / Tele PSU
  • Battery Protection Circuit