-4 A, -30 V. RDS(ON) = 0.050 Ω @ VGS = -10 V RDS(ON) = 0.075 Ω @ VGS = -4.5 V. Low gate charge (8nC typical). High performance trench technology for extremely low RDS(ON).

load switching and power management, battery charging circuits, and DC/DC conversion. Features -4 A, -30 V. RDS(ON) = .

This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Thes.

FDC658AP

FDC658AP-G

FDC6506P

FDC653N

FDC654P

FDC655AN

FDC655BN

FDC6561AN

FDC6000NZ

FDC6020C

FDC602P

FDC6036P

FDC604P