FDC658P
Description
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
Key Features
- RDS(ON) = 0.050 Ω @ VGS = -10 V RDS(ON) = 0.075 Ω @ VGS = -4.5 V
- Low gate charge (8nC typical)
- High performance trench technology for extremely low RDS(ON)
- SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick)
